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Product Details
  • image of Single FETs, MOSFETs>UF3C120080K4S
  • image of Single FETs, MOSFETs>UF3C120080K4S
Model UF3C120080K4S
Product Category Single FETs, MOSFETs
Manufacturer UnitedSiC (Qorvo)
Description SICFET N-CH 120
Encapsulation -
Package Tube
RoHS Status 1
Price: $11.8500
Enter Quantity

Quantity

Price

Total Price

1

$14.6300

$14.6300

30

$11.8500

$355.5000

120

$11.1500

$1,338.0000

510

$10.1100

$5,156.1000

1020

$9.2700

$9,455.4000

Obtain quotation information
image of Single FETs, MOSFETs>12083415
12083415
Model
12083415
Product Category
Single FETs, MOSFETs
Manufacturer
UnitedSiC (Qorvo)
Description
SICFET N-CH 120
Encapsulation
-
Package
Tube
lang_roHSStatusStatus
1
Product parameters
PDF(1)
PDF(2)
TYPEDESCRIPTION
MfrUnitedSiC (Qorvo)
Series-
PackageTube
Product StatusACTIVE
Package / CaseTO-247-4
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiCFET (Cascode SiCJFET)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Rds On (Max) @ Id, Vgs100mOhm @ 20A, 12V
Power Dissipation (Max)254.2W (Tc)
Vgs(th) (Max) @ Id6V @ 10mA
Supplier Device PackageTO-247-4
Drive Voltage (Max Rds On, Min Rds On)12V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 100 V
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