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HK Haoli Electronics

Product Details
  • image of Single FETs, MOSFETs>SQJ110EP-T1_GE3
  • image of Single FETs, MOSFETs>SQJ110EP-T1_GE3
  • image of Single FETs, MOSFETs>SQJ110EP-T1_GE3
  • image of Single FETs, MOSFETs>SQJ110EP-T1_GE3
Model SQJ110EP-T1_GE3
Product Category Single FETs, MOSFETs
Manufacturer Vishay / Siliconix
Description AUTOMOTIVE N-CH
Encapsulation -
Package Tape & Reel (TR)
RoHS Status 1
Price: $0.7500
Enter Quantity

Quantity

Price

Total Price

1

$1.6600

$1.6600

10

$1.3800

$13.8000

100

$1.1000

$110.0000

500

$0.9300

$465.0000

1000

$0.7900

$790.0000

3000

$0.7500

$2,250.0000

6000

$0.7200

$4,320.0000

9000

$0.7000

$6,300.0000

Obtain quotation information
image of Single FETs, MOSFETs>16839943
image of Single FETs, MOSFETs>16839943
16839943
Model
16839943
Product Category
Single FETs, MOSFETs
Manufacturer
Vishay / Siliconix
Description
AUTOMOTIVE N-CH
Encapsulation
-
Package
Tape & Reel (TR)
lang_roHSStatusStatus
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrVishay / Siliconix
SeriesTrenchFET®
PackageTape & Reel (TR)
Product StatusACTIVE
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C170A (Tc)
Rds On (Max) @ Id, Vgs6.3mOhm @ 15A, 10V
Power Dissipation (Max)500W (Tc)
Vgs(th) (Max) @ Id3.5V @ 250µA
Supplier Device PackagePowerPAK® SO-8
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs113 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6100 pF @ 25 V
QualificationAEC-Q101
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