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HK Haoli Electronics

Product Details
  • image of Single FETs, MOSFETs>SIR184LDP-T1-RE3
  • image of Single FETs, MOSFETs>SIR184LDP-T1-RE3
  • image of Single FETs, MOSFETs>SIR184LDP-T1-RE3
  • image of Single FETs, MOSFETs>SIR184LDP-T1-RE3
Model SIR184LDP-T1-RE3
Product Category Single FETs, MOSFETs
Manufacturer Vishay / Siliconix
Description N-CHANNEL 60 V
Encapsulation -
Package Tape & Reel (TR)
RoHS Status 1
Price: $1.4700
Enter Quantity

Quantity

Price

Total Price

1

$1.4700

$1.4700

10

$1.2100

$12.1000

100

$0.9400

$94.0000

500

$0.8000

$400.0000

1000

$0.6500

$650.0000

3000

$0.6100

$1,830.0000

6000

$0.5800

$3,480.0000

9000

$0.5500

$4,950.0000

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image of Single FETs, MOSFETs>16639860
image of Single FETs, MOSFETs>16639860
16639860
Model
16639860
Product Category
Single FETs, MOSFETs
Manufacturer
Vishay / Siliconix
Description
N-CHANNEL 60 V
Encapsulation
-
Package
Tape & Reel (TR)
lang_roHSStatusStatus
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrVishay / Siliconix
SeriesTrenchFET®
PackageTape & Reel (TR)
Product StatusACTIVE
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C21.5A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs5.4mOhm @ 10A, 10V
Power Dissipation (Max)5W (Ta), 56.8W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackagePowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1950 pF @ 30 V
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